CM400HG-66H Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7 ^{VGE = 0V, Tj = 25°C}
5 ^{f = 100kHz}
3
2
10²
7
Cies
5
3
2
10¹
7
5
Coes
3
2
Cres
101⁰_{0-1 2 3 5 7100 2 3 5 7101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
1.4
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 5Ω
1.2 Tj = 125°C, Inductive load
Eon
1
Eoff
0.8
0.6
Erec
0.4
0.2
0
0
200
400
600
800
COLLECTOR CURRENT (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 1650V, IC = 400A
Tj = 25°C
16
12
8
4
0
0
1
2
3
4
GATE CHARGE (µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3
VCC = 1650V, IC = 400A
VGE = ±15V
2.5 ^{Tj = 125°C, Inductive load}
Eon
2
1.5
1
0.5
0
0
Eoff
Erec
10
20
30
40
50
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005