CM400HG-66H Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
Tj = 125°C
700
600
VGE = 20V
VGE = 15V
VGE = 12V
500
400
VGE = 10V
300
200
VGE = 8V
100
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
800
VCE = 20V
700
600
500
400
300
200
100
0
0
Tj = 25°C
Tj = 125°C
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
200
400
600
800
COLLECTOR CURRENT (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
200
400
600
800
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005