CM400HG-66H Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
Limits
Unit
Min
Typ
Max
—
—
30.0 K/kW
—
—
60.0 K/kW
—
18.0
— K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
M
—
CTI
da
ds
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
Limits
Unit
Min
Typ
Max
7.0
—
15.0
3.0
—
6.0 N·m
1.0
—
3.0
—
0.52
—
kg
600
—
—
—
26.0
—
—
mm
56.0
—
—
mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005