CM400E4G-130H Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
10
V_CC = 3600V, V_GE = ±15V
R_G(on) = 15Ω, R_G(off) = 50Ω
L_S = 170nH, Tj = 125°C
Inductive load
td(off)
td(on)
1
tf
0.1
tr
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V_CC = 3600V, V_GE = ±15V
R_G(on) = 15Ω, L_S = 170nH
Tj = 125°C, Inductive load
10000
Irr
10
1000
trr
1
100
0.01
10
100
Collector Current [A]
1000
0.1
10
100
Emitter Current [A]
10
1000
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
Rth(j-c)Q = 21.0K/kW
Rth(j-c)R = 33.0K/kW
1
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
Z ∑ R 1−exp n
th( j−c ) ^{( t ) =}
i=1
⎪⎧
i
⎨
⎪⎩
τ ^⎜⎛
⎜
−
⎝
t
i
⎟⎞
⎟
⎠
⎪⎫
⎬
⎪⎭
R_i [K/kW] :
τ_i [sec] :
1
0.0096
0.0001
2
0.1893
0.0058
3
0.4044
0.0602
4
0.3967
0.3512
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1049-B 7 of 8