CM400E4G-130H Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400E4G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
Tj = 125°C
V_GE = 20V
600
V_GE = 15V
V_GE = 12V
V_GE = 10V
400
V_GE = 8V
200
TRANSFER CHARACTERISTICS
(TYPICAL)
800
V_CE = V_GE
600
400
200
Tj = 125°C
Tj = 25°C
0
01 2345 678
Collector - Emitter Voltage [V]
0
0
2
4
6
8 10 12
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
800
VGE = 15V
600
Tj = 25°C
Tj = 125°C
400
200
0
0
2
4
6
8
Collector-Emitter Saturation Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
800
600
400
Tj = 125°C
Tj = 25°C
200
0
0
2
4
6
8
Emitter-Collector Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1049-B 5 of 8