English
Language : 

CM400E4G-130H Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
Prepared by
Date
K.Kurachi
Revision: B
I.Umezaki 24-Feb.-2009
3th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400E4G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
CM400E4G-130H
● IC ……………………… 400 A
● VCES …………………… 6500 V
● 1-element in a Pack (for brake chopper)
● Insulated Type
● AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1049-B 1 of 8