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CM400E4G-130H Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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3th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400E4G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
10%VGE
0
90%VGE
VGE
90%IC
10%IC
0
td(on) tr
ton
t1
VCC
IC
10%VCE
VCE
t2
â« Eon =
icâ¢vce dt
t1
t2
di
10%VCE
90%IC
50%IC
dt
10%IC
td(off)
t3
tf2
t4
t4
â« Eoff =
icâ¢vce dt
t3
tf = (0.9ic â 0.1ic) / (di/dt)
toff = td(off) + tf
Fig. ï¼ â Definitions of switching times & energies of IGBT part
IE (IF)
di
0
Irr
0
di/dt
trr
dt
10%VEC
10%IE
VEC (VR)
t6
â« Qrr = â
ie dt
0
t6
â« Erec = â ieâ¢vec dt
t5
trr2
0 t5
t6
Fig. ï¼ â Definitions of reverse recovery charge & energy of FWDi part
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1049-B 4 of 8
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