CM400E4G-130H Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400E4G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
R_th(j-c)Q
R_th(j-c)R
Thermal resistance
Thermal resistance
R_th(c-f)
Contact thermal resistance
Conditions
Min
Junction to Case, IGBT part
—
Junction to Case, FWDi part
—
Junction to Case, Clamp-Di part
—
Case to Fin, λ_grease = 1W/m·K, D_(c-f) = 100 µm
—
Limits
Typ
—
—
—
9.0
Max
21.0
33.0
33.0
—
Unit
K/kW
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
M_s
Mounting torque
M_t
m
Mass
Conditions
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
Limits
Unit
Min
Typ
Max
7.0
—
15.0
N·m
3.0
—
6.0
N·m
1.0
—
3.0
N·m
—
1.35
—
kg
CTI
Comparative tracking index
600
—
—
—
d_a
d_s
L_{P CE}
Clearance
Creepage distance
Parasitic stray inductance
Collector to Emitter
Anode to Cathode
26.0
—
—
mm
56.0
—
—
mm
—
27.0
—
nH
—
54.0
—
nH
R_{CC’+EE’}
Internal lead resistance
T_c = 25°C, Collector to Emitter
T_c = 25°C, Anode to Cathode
—
0.19
—
mΩ
—
0.38
—
mΩ
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Note 6.
Pulse width and repetition rate should be such that junction temperature (T_j) does not exceed T_opmax rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake chopper,
anode to cathode clamp diode (Clamp-Di).
Junction temperature (T_j) should not exceed T_jmax rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
E_on(10%) / E_off(10%) / E_rec(10%) are the integral of 0.1V_CE x 0.1I_C x dt.
t_{(IGBT_off)} definition is shown as follows.
I_C
t_{(IGBT_off)}
time
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1049-B 3 of 8