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CM300DX-12A Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
CM300DX-12A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
103
7
5
3
tf
2
td(off)
102
7
tr
5 td(on)
3
2
1011 00 2 3
5 7 101
Conditions:
VCC = 300V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive load
2 3 5 7 102
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
102
7
Eoff
5
3
2
Eon
101
7
5
3
2
Conditions:
100
7
5
VCC = 300V
VGE = ±15V
3 IC, IE = 300A
2 Tj = 125°C
Inductive load
10–11 00 2 3 5 7 101
Err
23
5 7 102
GATE RESISTANCE RG (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 300A
VCC = 200V
15
VCC = 300V
10
5
00 200 400 600 800 1000 1200
GATE CHARGE QG (nC)
7
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
102
7 Conditions:
5 VCC = 300V
3 VGE = ±15V
2 RG = 5.1Ω
Eoff
101 Tj = 125°C
Eon
7 Inductive load
5
3
Err
2
100
7
5
3
2
10–1101 2 3 5 7 102 2 3 5 7 103
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
103
7 Conditions:
5
VCC = 300V
VGE = ±15V
3 RG = 5.1Ω
2 Tj = 25°C
Inductive load
Irr
trr
102
7
5
3
2
1011 01 2 3 5 7 102 2 3 5 7 103
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
100
7 Single pulse
5 TC = 25°C
3
2
10–1
7
5
3
2
10–2
7
5
3
2 Inverter IGBT part : Per unit base = Rth(j–c) = 0.13K/W
Inverter FWDi part : Per unit base = Rth(j–c) = 0.22K/W
10–3
10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101
TIME (s)
Jan. 2009