CM300DX-12A Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM300DX-12A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
Conditions
VCES
Collector-emitter voltage
G-E Short
VGES
Gate-emitter voltage
C-E Short
IC
ICRM
Collector current
DC, TC = 56°C
Pulse
(Note. 1)
(Note. 4)
PC
Maximum collector dissipation TC = 25°C
(Note. 1, 5)
IE (Note.3) Emitter current
TC = 25°C
(Note. 1)
IERM(Note.3) (Free wheeling diode forward current) Pulse
(Note. 4)
Tj
Junction temperature
Tstg
Storage temperature
Viso
Isolation voltage
Terminals to base plate, f = 60Hz, AC 1 minute
—
Base plate flatness
On the centerilne X, Y
(Note. 8)
—
Torque strength
Main terminals
M6 screw
—
Torque strength
Mounting
M5 screw
—
Weight
(Typical)
Note. 8: The base plate flatness measurement points are in the following figure.
Rating
600
±20
300
600
960
300
600
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
3.5 ~ 4.5
2.5 ~ 3.5
330
Unit
V
A
W
A
°C
Vrms
μm
N·m
g
:
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Jan. 2009
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