CM300DX-12A Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM300DX-12A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
Conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 30mA, VCE = 10V
5
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
Tj = 25°C
—
IC = 300A, VGE = 15V
(Note. 6)
VCE(sat) Collector-emitter saturation voltage
Tj = 125°C
—
IC = 300A, VGE = 15V
Chip
—
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
(Note. 6) —
—
QG
Total gate charge
VCC = 300V, IC = 300A, VGE = 15V
—
td(on)
Turn-on delay time
VCC = 300V, IC = 300A
—
tr
Turn-on rise time
VGE = ±15V, RG = 5.1Ω
—
td(off)
Turn-off delay time
Inductive load
—
tf
Turn-off fall time
—
trr (Note.3) Reverse recovery time
(IE = 300A)
—
Qrr (Note.3) Reverse recovery charge
—
VEC(Note.3) Emitter-collector voltage
IE = 300A, VGE = 0V
(Note. 6) ^{Tj = 25°C}
—
Tj = 125°C
—
IE = 300A, VGE = 0V
Chip
—
Rlead
Module lead resistance
Main terminals-chip, per switch
—
Rth(j-c)Q Thermal resistance
per IGBT
Rth(j-c)R (Junction to case) (Note. 1) per free wheeling diode
—
Rth(c-f)
Contact thermal resistance Thermal grease applied
(Case to heat sink) (Note. 1) per 1 module
(Note. 2) —
RGint
Internal gate resistance
TC = 25°C
—
RG
External gate resistance
2.0
Limits
Typ.
Max. ^Unit
—
1
mA
6
7
V
—
0.5
μA
1.7
2.1
1.9
—
V
1.6
—
—
34
—
4
nF
—
1.2
800
—
nC
—
200
—
150
—
350
ns
—
600
—
200
9
—
μC
2.0
2.8
1.95
—
V
1.9
—
1.1
—
mΩ
0.13
—
0.22 _K/W
0.015
—
0
—
Ω
—
21
NTC THERMISTOR PART
Symbol
Parameter
R
ΔR/R
B(25/50)
P25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
Conditions
TC = 25°C
TC = 100°C, R100 = 493Ω
Approximate by equation
TC = 25°C
Min.
4.85
–7.3
(Note. 7) —
—
Limits
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
7: B(25/50) = In( ^R25 )/( ¹
1)
R50 T25 T50
R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]
Unit
kΩ
%
K
mW
Jan. 2009
3