CM300DX-12A Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM300DX-12A
HIGH POWER SWITCHING USE
C1(C1s)
V ^{VGE = 15V}
G1
E1(E1s)
VGE = 0V
G2
E2(E2s)
Tr1
C1
IC
C1
C1(C1s)
VGE = 0V
G1
E1C2
E1(E1s)
E1C2
VGE = 15V
G2
IC ^V
E2(E2s)
E2
E2
Tr2
VCE(sat) test circuit
C1(C1s)
V ^{VGE = 0V}
G1
E1(E1s)
VGE = 0V
G2
E2(E2s)
Di1
C1
IE
C1
C1(C1s)
VGE = 0V
G1
E1C2
E1(E1s)
E1C2
VGE = 0V
G2
IE ^V
E2(E2s)
E2
E2
Di2
VEC test circuit
–VGE
+VGE
0V
–VGE
RG
VGE
Arm
IE
Load
VGE
0V
90%
IE
0%
+ VCC
IC
90%
0A
VCE
IC
0A
td(on)
tr
td(off)
Switching time test circuit and waveforms
10%
tf
trr
t
Irr
1/2 ✕ Irr
Qrr = 1/2 ✕ Irr ✕ trr
trr, Qrr test waveform
Jan. 2009
5