HCM-1002-H Datasheet, PDF (6/7 Pages) Mitsubishi Electric Semiconductor – HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION

MITSUBISHI ELECTRIC CORPORATION
IGBT part: turn-on switching
10%V_GE
0
IGBT part: turn-off switching
90%V_GE
V_GE
V_CC
90%I_C
10%I_C
0
td(on) tr
ton
t1
I_C
10%V_CE
V_CE
t2
∫ ^{Eon =}
ic•vce dt
t1
t2
di
10%V_CE
90%I_C
50%I_C
dt
10%I_C
td(off)
toff
t3
tf2
t4
t4
∫ ^{Eoff =}
ic•vce dt
t3
tf1 = (0.9ic − 0.1ic) / (di/dt)
Fig. 3 – Definitions of switching times & energies of IGBT part
Diode part: reverse recovery
I_E (I_F)
di
0
Irr
0
di/dt
trr1
dt
10%V_EC
10%I_E
V_EC (V_R)
t6
∫ ^{Qrr = –}
ie dt
0
t6
∫ Erec = – ie•vec dt
t5
trr2
t5
t6
Fig. 4 – Definitions of reverse recovery charge & energy of FWDi part
HIGH VOLTAGE IGBT MODULE
TARGET SPECIFICATION
HCM-1002-H
(HV-SETSU)
PAGE
6/7