HCM-1002-H Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION

MITSUBISHI ELECTRIC CORPORATION
11. Test Circuit & Definition of Switching Characteristics
LS1 = 500 nH
DUT: diode
Rg
V GE3
DUT: IGBT
Rg
V GE1
V GE2
LLOAD
LS2 = 150 nH
C = 1 mF
VCC
CS = 25 uF
Fig. 2 (a) – Switching test circuit
LS = 100 nH
DUT: IGBT
Rg
V GE1
V GE2
CS = 25 uF C = 1 mF
VCC
Fig. 2 (b) – Short circuit test circuit
HIGH VOLTAGE IGBT MODULE
TARGET SPECIFICATION
HCM-1002-H
(HV-SETSU)
PAGE
5/7