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HCM-1002-H Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION
MITSUBISHI ELECTRIC CORPORATION
6. Maximum Ratings
Item
6.1 Collector-emitter voltage
6.2 Gate-emitter voltage
6.3 Collector current
6.4 Emitter current (note 2)
6.5 Maximum Collector dissipation
6.6 Isolation voltage
6.7 Partial discharge
Symbol
VCES
Conditions
VGE = 0 V, Tj = −40 °C
VGE = 0 V, Tj = +25 °C
VGE = 0 V, Tj = +125 °C
VGES
VCE = 0 V, Tj = 25 °C
IC
DC, Tc = 80 °C
ICM
Pulse (note 1)
IE
IEM
Pulse (note 1)
PC
Tc = 25 °C, IGBT part (note 3)
Viso
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
Qpd
V1 = 6900 Vrms, V2 = 5100 Vrms
60 Hz (acc. to IEC 1287)
6.8 Junction temperature
Tj
—
Ratings
Unit
5800
6300
V
6500
± 20
V
600
A
1200
600
A
1200
8900
W
10200
V
10
pC
−40 ~ +150 °C
6.9 Storage temperature
Tstg
—
−40 ~ +125 °C
6.10 Operating temperature
Top
—
−40 ~ +125 °C
6.11 Maximum turn-off switching
current
6.12 Short circuit capability
(maximum pulse width)
6.13 Maximum reverse recovery
instantaneous power (note 2)
VCC ≤ 4500 V
—
VGE = ±15 V, Tj = 125 °C
[See Fig. 2 (a)]
VCC ≤ 4500 V
—
VGE = ±15 V, Tj = 125 °C
[See Fig. 2 (b)]
VCC ≤ 4500 V
— die/dt ≤ 3000 A/µs, Tj = 125 °C
[See Fig. 2 (a)]
1200
A
10
µs
3600
kW
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Note 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
7. Electrical Characteristics
Item
7.1 Collector cutoff current
7.2 Gate-emitter threshold voltage
7.3 Gate leakage current
Symbol
Conditions
Limits
Unit
Min. Typ. Max.
ICES
VCE = VCES
VGE = 0 V
Tj = 25 °C — —
10 mA
Tj = 125 °C — 30 90
VGE(th)
IC = 60 mA, VCE = 10 V
Tj = 25 °C
5.0 6.0 7.0 V
IGES
VGE = VGES, VCE = 0 V
Tj = 25 °C
— — 0.5 µA
HIGH VOLTAGE IGBT MODULE
TARGET SPECIFICATION
HCM-1002-H
(HV-SETSU)
PAGE
2/7