HCM-1002-H Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION

MITSUBISHI ELECTRIC CORPORATION
Item
7.4 Collector-emitter
saturation voltage
7.5 Input capacitance
7.6 Output capacitance
7.7 Reverse transfer capacitance
7.8 Total gate charge
7.9 Emitter-collector voltage ^{(note 2)}
7.10 Turn-on delay time
7.11 Turn-on rise time
7.12 Turn-on switching energy
Symbol
V_CE(sat)
C_ies
C_oes
C_res
Q_G
V_EC
t_d(on)
t_r
E_on
Conditions
I_C = 600 A ^{(note 4)} Tj = 25 °C
V_GE = 15 V
T_j = 125 °C
V_CE = 10 V, V_GE = 0 V
f = 100 kHz, T_j = 25 °C
V_CE = 10 V, V_GE = 0 V
f = 100 kHz, T_j = 25 °C
V_CE = 10 V, V_GE = 0 V
f = 100 kHz, T_j = 25 °C
V_CC = 3600 V, I_C = 600 A
V_GE = 15 V, T_j = 25 °C
I_E = 600 A ^{(note 4) T}j ^{= 25 °C}
V_GE = 0 V
T_j = 125 °C
V_CC = 3600 V, I_C = 600 A
V_GE1 = −V_GE2 = 15 V
R_G(on) = 10 Ω, T_j = 125 °C
t_off = 60 µs ^{(note 5)}
Inductive load
[See Fig. 2 (a), Fig. 3]
Limits
Min. Typ. Max.
— 5.10 —
— 5.00 —
— 124 —
— 7.6 —
— 2.2 —
— 9.9 —
— 4.00 —
— 3.60 —
— 1.20 —
— 0.35 —
— 4.50 —
Unit
V
nF
nF
nF
µC
V
µs
µs
J/P
7.13 Turn-off delay time
t_d(off)
7.14 Turn-off fall time
t_f1
7.15 Turn-off fall time
t_f2
7.16 Turn-off switching energy
E_off
7.17 Reverse recovery time ^{(note 2)}
t_rr1
7.18 Reverse recovery time ^{(note 2)}
t_rr2
7.19 Reverse recovery charge ^{(note 2)} Q_rr
7.20 Reverse recovery energy ^{(note 2)} E_rec
V_CC = 3600 V, I_C = 600 A
V_GE1 = −V_GE2 = 15 V
R_G(off) = 24 Ω, T_j = 125 °C
t_{(IGBT_off)} = 60 µs ^{(note 5)}
Inductive load
[See Fig. 2 (a), Fig. 3]
V_CC = 3600 V, I_E = 600 A
di_e/dt = −2000 A/µs
T_j = 125 °C
t_off = 60 µs ^{(note 5)}
Inductive load
[See Fig. 2 (a), Fig. 4]
— 6.60 — µs
— 0.50 — µs
— 3.30 — µs
— 3.50 — J/P
— 1.00 — µs
— 2.40 — µs
— 1100 — µC
— 2.00 — J/P
Note 4.
Note 5.
I_C
Pulse width and repetition rate should be such as to cause negligible temperature rise.
t_{(IGBT_off)} definition is shown as follows.
HIGH VOLTAGE IGBT MODULE
TARGET SPECIFICATION
t_{(IGBT_off)}
HCM-1002-H
time
(HV-SETSU)
PAGE
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