HCM-1002-H Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION

MITSUBISHI ELECTRIC CORPORATION
8. Thermal Characteristics
Item
Symbol
Conditions
8.1 Thermal resistance
8.2 Thermal resistance ^{(note 2)}
8.3 Contact thermal resistance
R_th(j-c)Q
R_th(j-c)R
R_th(c-f)
Junction to case
IGBT part
Junction to case
FWDi part
Case to fin ^{(note 6)}
Conductive grease applied
Note 6. Thermal conductivity is 1W/mK with a thickness of 100µm.
Limits
Unit
Min. Typ. Max.
— — 14.0 K/kW
— — 22.0 K/kW
— 6.0 — K/kW
9. Mechanical Characteristics
Item
Symbol
Conditions
9.1 Mounting torque
— Main terminal screw : M8
Limits
Unit
Min. Typ. Max.
7.0 — 15.0 N·m
9.2 Mounting torque
— Mounting screw : M6
3.0 — 6.0 N·m
9.3 Mounting torque
— Auxiliary terminal screw : M4 1.0 — 3.0 N·m
9.4 Mass
—
—
— 1.35 — kg
9.5 Comparative tracking index
CTI
—
600 — — —
9.6 Clearance
—
—
26.0 — — mm
9.7 Creepage distance
—
—
56.0 — — mm
9.8 Internal inductance
9.9 Internal lead resistance
L_C-E(int)
—
R_C-E(int) T_c = 25 °C
— 18 — nH
— 0.18 — mΩ
10. Shipping Inspection Report Item ^{(note 7)}
Static characteristics :
I_CES [7.1], V_GE(th) [7.2], I_GES [7.3], V_CE(sat) [7.4], V_EC [7.9]
Switching characteristics : t_d(on) [7.10], t_r [7.11], t_d(off) [7.13], t_f [7.14], Short circuit current [6.11]
Note 7. One shipping inspection report with the above item values is submitted when modules are delivered. The conductions are
defined in bracket.
HIGH VOLTAGE IGBT MODULE
TARGET SPECIFICATION
HCM-1002-H
(HV-SETSU)
PAGE
4/7