English
Language : 

CM100DUS-12F_11 Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
◁
ç
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=6.3 Ω,
Tj =125 °C, INDUCTIVE LOAD
1000
td(off)
tf
100
td(on)
10
tr
1
1
10
100
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=6.3 Ω, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
10
MITSUBISHI IGBT MODULES
ç CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=6.3 Ω,
Tj =125 °C, INDUCTIVE LOAD
100
trr
Irr
10
1
10
100
EMITTER CURRENT IE (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, IC/IE=100 A, VGE=±15 V, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
100
1
Eon
Eoff
Err
0.1
1
10
100
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
6
Eon
10
Eoff
1
Err
0.1
1
10
100
EXTERNAL GATE RESISTANCE RG (Ω)
February-2011
 ▷