CM100DUS-12F_11 Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
ç ^CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
ç
ABSOLUTE MAXIMUM RATINGS (T_j=25 °C, unless otherwise specified)
Symbol
Item
Conditions
Rating
Unit
V_CES
Collector-emitter voltage
G-E short-circuited
600
V
V_GES
I_C
I_CRM
P_tot
P_tot'
IE
IERM
(Note.1)
(Note.1)
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
(Free wheeling diode forward current)
C-E short-circuited
TC=25 °C ^(Note.2)
Pulse, Repetitive ^(Note.4)
TC=25 °C
TC'=25 °C
TC=25 °C
(Note.2, 5)
(Note.3, 5)
(Note.2)
Pulse, Repetitive ^(Note.4)
±20
V
100
A
200
350
W
445
100
A
200
T_j
Junction temperature
-
T_stg
Storage temperature
-
-40 ~ +150
-40 ~ +125
°C
V_isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
V
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I_CES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1
mA
I_GES
Gate-emitter leakage current
±VGE=VGES, C-E short-circuited
-
-
20
μA
V_GE(th)
Gate-emitter threshold voltage
IC=10 mA, VCE=10 V
5
6
7
V
V_CEsat
Collector-emitter saturation voltage
IC=100 A , ^(Note.6)
VGE=15 V
T _j =25 °C
1.7
2.0
2.7
V
T _j =125 °C
-
1.95
-
C_ies
Input capacitance
-
-
27
C_oes
Output capacitance
VCE=10 V, G-E short-circuited
-
-
1.8
nF
C_res
Reverse transfer capacitance
-
-
1.0
Q_G
Gate charge
VCC=300 V, IC=100 A, VGE=15 V
-
620
-
nC
t_d(on)
t_r
t_d(off)
t_f
V ^(Note.1)
EC
t (Note.1)
rr
Q (Note.1)
rr
E_on
E_off
E ^(Note.1)
rr
r_g
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
VCC=300 V, IC=100 A, VGE=±15 V,
RG=6.3 Ω, Inductive load
I_E=100 A ^(Note.6) , G-E short-circuited
VCC=300 V, IE=100 A, VGE=±15 V,
R_G=6.3 Ω, Inductive load
V_CC=300 V, I_C=I_E=100 A,
V_GE=±15 V, R_G=6.3 Ω, T _j =125 °C,
Inductive load
Per switch
-
-
100
-
-
80
ns
-
-
300
-
-
150
-
2.0
2.6
V
-
-
150
ns
-
1.9
-
μC
-
1.55
-
-
2.2
-
mJ
-
1.2
-
-
0
-
Ω
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
Conditions
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
R_th(j-c')Q
R_th(j-c')D
Thermal resistance ^(Note.2)
Contact thermal resistance ^(Note.2)
Thermal resistance ^(Note.3)
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied ^(Note.7)
Junction to case, per IGBT
Junction to case, per FWDi
Min.
Limits
Typ.
Max.
Unit
-
-
0.35
K/W
-
-
0.70
K/W
-
0.07
-
K/W
-
-
0.28
K/W
-
-
0.40
K/W
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
Mounting torque
M_s
m
Weight
e_c
Flatness of base plate
Conditions
Main terminals
M 5 screw
Mounting to heat sink M 6 screw
-
On the centerline X, Y ^(Note.8)
Min.
Limits
Typ.
Max.
Unit
2.5
3.5
3.0
4.0
3.5
4.5
N·m
-
310
-
g
-100
-
+100
μm
2
February-2011