CM100DUS-12F_11 Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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RECOMMENDED OPERATING CONDITIONS (T_a=25 °C)
Symbol
Item
Conditions
V_CC
V_GEon
R_G
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
MITSUBISHI IGBT MODULES
CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Unit
Min.
Typ.
Max.
-
300
400
V
13.5
15.0
16.5
6.3
-
63
Ω
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T_C) measured point is base plate side. (Refer to the figure of chip location)
Note.3: Case temperature (T_C') and heat sink temperature (T _s ') are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R _{t h( s - a)} } should measure just under the chips.
Note.4: Pulse width and repetition rate should be such that the device junction temperature (T _j ) dose not exceed T _{j m a x} rating.
Note.5: Junction temperature (T _j ) should not increase beyond T _{j m a x} rating.
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: Base plate flatness measurement points are as in the following figure.
3 mm
X
3 mm
Bottom
Bottom
Y
-: Concave
3 mm
Bottom
CHIP LOCATION (Top view)
+: Convex
Dimension in mm, tolerance: ±1 mm
Case Temperature (T_C)
measured point
(Base plate side)
Tr1/Tr2: IGBT, Di1/Di2: FWDi
3
February-2011