CM100DUS-12F_11 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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MITSUBISHI IGBT MODULES
CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
CM100DUS-12F
Dual (Half-Bridge)
- 4^th generation Fast switching IGBT module -
Collector current I_C .............…............…
Collector-emitter voltage V_CES ...........…
Maximum junction temperature T_jmax ...
●Flat base Type
100A
600V
1 5 0 °C
●Copper base plate
●RoHS Directive compliant
●UL Recognized under UL1557, File E323585
APPLICATION
High frequency (30 kHz ~ 60 kHz) switching use: Induction heating, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
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Tolerance otherwise specifiedç
Division of Dimension Tolerance
0.5 to 3
±0.2
over 3 to 6
±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
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INTERNAL CONNECTION
RTC
Tr2
C2E1
E2
Di2
1
Di1
RTC
C1
Tr1
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February-2011