CM100DUS-12F_11 Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T _j =25 °C
13 V 11 V 10 V 9.5 V
200
V_GE=20 V
180
15 V
9V
8.5
160
140
120
8V
100
80
7.5
60
40
7V
20
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T _j =25 °C
5
4.5
4
I_C=200 A
3.5
I_C=100 A
3
I_C=40 A
2.5
2
1.5
1
0.5
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE V_GE (V)
MITSUBISHI IGBT MODULES
ç ^CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V_GE=15 V
3
2.5
T _j =125 °C
2
1.5
T _j =25 °C
1
0.5
0
0
50
100
150
200
COLLECTOR CURRENT I_C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited , T_j =25 °C
1000
100
10
1
0
0.5
1
1.5
2
2.5
3
3.5
4
EMITTER-COLLECTOR VOLTAGE V_EC (V)
5
February-2011