MYX29GL01GS11DPIV2 Datasheet, PDF (3/68 Pages) Micross Components – Tin-lead ball metallurgy

1Gb GL-S MirrorBit^® Eclipse^™
Flash Memory
MYX29GL01GS11DPIV2*
Data Sheet
*Advanced information. Subject to change without notice.
1
Product Overview
1. Product_ThO_ev_Me_Yr_Xv₂₉ie_GLw_{01GS11DPIV2 has a 16-bit (word) wide data bus and uses only word boundary addresses. All}
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pr^to^rv^aiⁿd^se^fe1^r6^cb^yit^cs^leo^.f data on each bus transfer cycle. All writes take 16 bits of data from each bus transfer cycle.
Figure 1: Block Diagram
RY/BY#
V_CC
V_SS
V_IO
RESET#
Figure 1.1 Block Diagram
Sector Switches
Erase Voltage
Generator
DQ15–DQ0
Input/Output
Buffers
WE#
WP#
CE#
OE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
STB
Data
Latch
A_Max**–A0
V_CC Detector
Timer
Y-Decoder
STB
X-Decoder
Y-Gating
Cell Matrix
Note: A_MAX GL01GS = A25
:
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memories. This MYX29GL01GS11DPIV2 has the fast random access of XIP flash along with the high density
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fast program speed of Data Storage flash.
Read access to any random location takes 90 ns to 120 ns depending on device density and I/O power supply
Rsue_vpaopdltlyaa_gvceoc.letaEsgs_aecto._hEaranacynhdrar_{oanmnddo(ominmit}l_io_a(icln)ai_attiicaolcn)_eatsac_skcee_rs_esas9d0re_sna_asd_nstoean1n2_tier0_{ennt3isr2ed-3eb2py-etbe}nyd_ateiln_igga_{nlioegndnedgder}v_ogiucroe_{pudopefondfsadittayataac}n_{acdallelIl/deOda}pa_PoPw_aagegr_{ee..Other words}
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ac_tc_he_es_saw_mit_ehin_Path_ge_es_ta_am_kee_sP₁a₅ge_nsta_tk_oe₃s₀15_nsn_.s_Tt_ho_is30_isn_cs_a. _lT_leh_dis_Pis_agc_eall_Med_odP_eag_reaM_do_. d_Ce_hr_ae_na_gd_in. C_gh_aa_nn_yg_oin_fg_tha_eny_hio_gf_ht_eh_re_{word address}
hig_bh_ite_sr_ww_io_ll r_sd_ea_led_cd_tre_as_ds_ifb_feit_rs_ew_ntill_Ps_ae_gle_ec_at _na_ddi_bff_ee_gre_innt_aP_na_eg_we a_inn_id_tiab_le_ag_cin_cea_ssn_.ew_Allin_reit_aia_dl a_ac_cc_ce_es_ss_s. _eA_sll _are_read_asa_yc_nc_ce_hss_roe_ns_oa_ure_s.
asynchronous.
MYX29GL01GS11DPIV2
Revision 1.0 - 01/26/2015
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Form #: CSI-D-685 Document 001