MYX29GL01GS11DPIV2 Datasheet, PDF (1/68 Pages) Micross Components – Tin-lead ball metallurgy

1Gb GL-S MirrorBit^® Eclipse^™
Flash Memory
MYX29GL01GS11DPIV2*
*Advanced information. Subject to change without notice.
1Gbit - 64M x 16 GL-S MirrorBit^© Eclipse^™ Flash Memory
Features
• Tin-lead ball metallurgy
• 65 nm MirrorBit Eclipse technology
• Single supply (V_CC) for read / program / erase
(2.7V to 3.6V)
• Versatile I/O Feature
ƒƒ Wide I/O voltage range (V_IO): 1.65V to V_CC
• Asynchronous 32-byte page read
• 512-byte programming buffer
ƒƒ Programming in page multiples, up to a maximum of
512 bytes
• Single word and multiple program on same
• word options
• Sector Erase
ƒƒ Uniform 128-kbyte sectors
• Suspend and resume commands for program and erase
operations
• Status register, data polling, and ready/busy pin methods
to determine device status
• Advanced Sector Protection (ASP)
ƒƒ Volatile and non-volatile protection methods for each
sector
• Separate 1024-byte One Time Program (OTP) array with
two lockable regions
• Common Flash Interface (CFI) parameter table
• 100,000 erase cycles for any sector typical
• 20-year data retention typical
OptionsMarking
• Configuration
ƒƒ 64M x 16
• FBGA package (Sn63 Pb37 solder)
BG
ƒƒ 64-ball FBGA (9mm x 9mm)
D
• Operating temperature
ƒƒ Industrial (-40°C ≤ T_C ≤ +85°C)
IT
Table 1: Performance Summary
Density
1 Gb
Voltage Range
Random
Access Time (t_ACC)
Page
Access Time (t_PACC)
Full V_CC = V_I0
100
15
VersatileIO V_IO
110
25
Typical Program and Erase Rates
Buffer Programming (512 bytes)
Sector Erase (128 kbytes)
Maximum Current Consumption
Active Read at 5 MHz, 30 pF
Program
Erase
Standby
CE#
Access Time (t_CE)
100
110
1.5 MB/s
477 kB/s
60 mA
100 mA
100 mA
100 μA
OE#
Access Time (t_OE)
25
35
MYX29GL01GS11DPIV2
Revision 1.0 - 01/26/2015
1
Form #: CSI-D-685 Document 001