A3PE600L-FGG484M Datasheet, PDF (82/212 Pages) Microsemi Corporation – Each Device Tested from –55°C to 125°C, Not Susceptible to Neutron-Induced Configuration Loss

Military ProASIC3/EL DC and Switching Characteristics
Table 2-103 • 1.5 V LVCMOS Low Slew
Military-Case Conditions: T_J = 125°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V
Applicable to Standard Plus I/O Banks
Drive
Strength
2 mA
Speed
Grade t_DOUT t_DP t_DIN t_PY t_EOUT t_ZL t_ZH t_LZ t_HZ t_ZLS t_ZHS Units
Std. 0.63 8.94 0.05 1.43 0.45 9.11 7.80 2.99 2.67 11.57 10.26 ns
–1
0.54 7.61 0.04 1.21 0.39 7.75 6.64 2.54 2.27 9.84 8.73 ns
4 mA
Std. 0.63 7.68 0.05 1.43 0.45 7.83 6.91 3.34 3.30 10.29 9.37 ns
–1
0.54 6.54 0.04 1.21 0.39 6.66 5.88 2.84 2.80 8.75 7.97 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-8 for derating values.
Table 2-104 • 1.5 V LVCMOS High Slew
Military-Case Conditions: T_J = 125°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V
Applicable to Standard Plus I/O Banks
Drive
Strength
2 mA
Speed
Grade
Std.
t_DOUT
0.63
t_DP
3.55
t_DIN
0.05
t_PY
1.56
t_EOUT
0.45
t_ZL
3.61
t_ZH
3.22
t_LZ
2.98
t_HZ
2.80
t_ZLS
6.07
t_ZHS
5.68
Units
ns
–1
0.54 3.02 0.04 1.33 0.39 3.07 2.74 2.54 2.39 5.16 4.83 ns
4 mA
Std. 0.63 3.09 0.05 1.56 0.45 3.14 2.62 3.34 3.44 5.60 5.08 ns
–1
0.54 2.62 0.04 1.33 0.39 2.67 2.23 2.84 2.93 4.77 4.32 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-8 for derating values.
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Revision 3