A3PE600L-FGG484M Datasheet, PDF (10/212 Pages) Microsemi Corporation – Each Device Tested from –55°C to 125°C, Not Susceptible to Neutron-Induced Configuration Loss

Military ProASIC3/EL Device Family Overview
In addition, extensive on-chip programming circuitry allows for rapid, single-voltage (3.3 V) programming
of military ProASIC3/EL devices via an IEEE 1532 JTAG interface.
Bank 0
CCC
RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
I/Os
VersaTile
ISP AES
Decryption
User Nonvolatile
FlashROM
Charge Pumps
RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
Bank 2
Figure 1-1 • Military ProASIC3 Device Architecture Overview with Four I/O Banks (A3P250 and A3P1000)
CCC
RAM Block
4,608-Bit Dual-Port SRAM
or FIFO Block
Pro I/Os
ISP AES
Decryption*
User Nonvolatile
FlashRom
Flash*Freeze
Technology
Charge
Pumps
VersaTile
RAM Block
4,608-Bit Dual-Port SRAM
or FIFO Block
Figure 1-2 • Military ProASIC3EL Device Architecture Overview (A3PE600L and A3PE3000L)
1-4
Revision 3