APT35GA90BD15 Datasheet, PDF (8/9 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristics
T_J = 25°C unless otherwise specified
APT35GA90BD_SD15
45
400
40
350
30A
T_J = 125°C
V_R = 667V
35
30
T_J = 175°C
25
20
T_J = 125°C
15
10
5
T_J = 25°C
T_J = -55°C
300
15A
250
200
7.5A
150
100
50
0
0
1
2
3
4
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
2000
T_J = 125°C
1800 ^VR ^{= 667V}
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
25
T_J = 125°C
V_R = 667V
30A
1600
20
30A
1400
1200
15
1000
800
600
400
15A
7.5A
15A
10
7.5A
5
200
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.2
1.0
t_rr
0.8
I_RRM
0.6
Q_rr
t_rr
35
Duty cycle = 0.5
T_J = 175°C
30
25
20
15
0.4
Q_rr
10
0.2
5
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
80
70
60
50
40
30
20
10
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature