APT35GA90BD15 Datasheet, PDF (7/9 Pages) Microsemi Corporation – High Speed PT IGBT

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT35GA90BD_SD15 Unit
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 126°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3 ms)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
15
29
Amps
80
Min Type Max Unit
V_F
Forward Voltage
DYNAMIC CHARACTERISTICS
Symbol Characteristic
I_F = 15A
I_F = 30A
I_F = 15A, T_J = 125°C
Test Conditions
2.5
3.06
Volts
1.92
Min Typ Max Unit
t_rr
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 1A, di_F/dt = -100A/µs,
V_R = 30V, T_J = 25°C
I_F = 15A, di_F/dt = -200A/µs
V_R = 667V, T_C = 25°C
I_F = 15A, di_F/dt = -200A/µs
V_R = 667V, T_C = 125°C
I_F = 15A, di_F/dt = -1000A/µs
V_R = 667V, T_C = 125°C
-
20
-
ns
-
235
-
-
185
-
nC
-
3
-
Amps
-
300
-
ns
-
810
-
nC
-
6
-
Amps
-
125
-
ns
-
1150
-
nC
-
19
-
Amps
1.20
D = 0.9
1.00
0.7
0.80
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
0.05
SINGLE PULSE
Duty Factor D = ^t1/^t2
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION