APT35GA90BD15 Datasheet, PDF (4/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
15
V_CE = 600V
T_J = 25°C, or 125°C
R_G = 10Ω
14 L = 100μH
13
12
11
10
0
5 10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
50
R_G = 10Ω, L = 100μH, V_CE = 600V
45
40
35
30
25
20
15
10
T_J = 25 or 125°C,V_GE = 15V
5
0
05
10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
2500
2000
V_CE = 600V
V_GE = +15V
R_G =10Ω
1500
T_J = 125°C
1000
500
T_J = 25°C
0
0 5 10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
3500
3000
2500
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_on2,36A
2000
E_off,36A
1500
1000
500
E_on2,18A
E_off,18A
E_on2,9A
E_off,9A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT35GA90BD_SD15
200
160
V_GE =15V,T_J=125°C
120
80
V_GE =15V,T_J=25°C
40
V_CE = 600V
R_G = 10Ω
L = 100μH
0
0 5 10
15 20 25 30
35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
200
180
T_J = 125°C, V_GE = 15V
160
140
120
100
80
60
T_J = 25°C, V_GE = 15V
40
20
R_G = 10Ω, L = 100μH, V_CE = 600V
0
0 5 10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2500
2250
2000
V_CE = 600V
V_GE = +15V
R_G = 10Ω
1750
1500
T_J = 125°C
1250
1000
750
500
250
T_J = 25°C
0
0 5 10 15 20 25 30 35 40
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
3000
2500
V_CE = 600V
V_GE = +15V
R_G = 10Ω
E_on2,36A
2000
1500
E_off,36A
1000
E_on2,18A
500
E_off,18A
E_on2,9A
E_off,9A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature