APT35GA90BD15 Datasheet, PDF (3/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
60
V_GE = 15V
T_J= 125°C
50
T_J= 55°C
40
T_J= 25°C
30
T_J= 150°C
20
10
0
0
1
2
3
4
56
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
100
250μs PULSE
TEST<0.5 % DUTY
CYCLE
80
60
40
20
T_J= 25°C
T_J= 125°C
0
0 246
T_J= -55°C
8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4
T_J = 25°C.
I_C = 36A
250μs PULSE TEST
<0.5 % DUTY CYCLE
3
I_C = 18A
2
I_C = 3A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
APT35GA90BD_SD15
250
15V
13V
200
11V
150
10V
100
9V
8V
50
7V
6V
0
04
8 12 16 20 24 28 32
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
16
I_C = 18A
14
T_J = 25°C
V_CE = 180V
12
V_CE = 450V
10
8
V_CE = 720V
6
4
2
0
0
20
40
60
80 100
GATE CHARGE (nC)
FIGURE 4, Gate charge
5
4
I_C = 36A
3
I_C = 18A
2
I_C = 3A
1
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
80
70
60
50
40
30
20
10
0 ₂₅
50
75
100
125 150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature