APT35GA90BD15 Datasheet, PDF (1/9 Pages) Microsemi Corporation – High Speed PT IGBT

APT35GA90BD15
APT35GA90SD15
900V
High Speed PT IGBT
POWER MOS 8^® is a high speed Punch-Through switch-mode IGBT. Low E_off is achieved
through leading technology silicon design and lifetime control processes. A reduced E_off -
V_CE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of C_res/C_ies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
(B)
TO-247
G
C
E
D³PAK
(S)
C
G
E
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Combi (IGBT and Diode)
FEATURES
• Fast switching with low EMI
• Very Low E_off for maximum efficiency
• Ultra low C_res for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol Parameter
V_ces
I_C1
I_C2
I_CM
V_GE
P_D
SSOA
T_J, T_STG
T_L
Collector Emitter Voltage
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 100°C
Pulsed Collector Current ¹
Gate-Emitter Voltage ²
Total Power Dissipation @ T_C = 25°C
Switching Safe Operating Area @ T_J = 150°C
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Ratings
900
63
35
105
±30
290
105A @ 900V
-55 to 150
300
Unit
V
A
V
W
°C
Static Characteristics
T_J = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min Typ Max Unit
V_BR(CES)
V_CE(on)
V_GE(th)
I_CES
I_GES
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
V_GE = 0V, I_C = 1.0mA
900
V_GE = 15V,
T_J = 25°C
I_C = 18A
T_J = 125°C
V_GE =V_CE , I_C = 1mA
3
V_CE = 900V,
T_J = 25°C
V_GE = 0V
T_J = 125°C
V_GS = ±30V
2.5
3.1
V
2.2
4.5
6
350
μA
1500
±100
nA
Microsemi Website - http://www.microsemi.com