APT30M70BVFRG Datasheet, PDF (6/44 Pages) Microsemi Corporation – Power Semiconductors Power Modules RF Power MOSFETs

SiC and Power MOS 8 MOSFETs
SiC ^{Silicon Carbide MOSFETs}
BVDSS
Volts
1200
RDS(ON)
Ohms
0.080
0.080
0.050
0.050
ID(Cont)
Amps
40
40
50
50
Part Number
APT40SM120B
APT40SM120J
APT50SM120B
APT50SM120J
Package Style
TO-247
ISOTOP®
TO-247
ISOTOP®
Power MOS 8^TM MOSFETs / FREDFETs
TM

(fast body diode)
Power MOS 8™ is Microsemi's latest family of high speed, high voltage (500-1200V)
N-channel switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These new MOSFETs / FREDFETs have been
optimized for both hard and soft switching in high frequency, high voltage applications rated
above 500W. There are 2 product types in the Power MOS 8™ MOSFET family:
1) MOSFET
2) FREDFETs have a fast recovery body diode characteristic, providing high commutation dv/dt
ruggedness and high reliability in ZVS circuits.
Features • Fast switching

• Low EMI

• Quiet switching
Applications




• Power factor correction
• Server and telecom power systems
• Solar inverters
• Semiconductor capital equipment
• Induction heating
• Avalanche energy rated
• Low gate charge
• Lower cost
• Arc welding
• Plasma cutting
• Battery chargers
• Medical
Quiet Switching
The new Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capaci-
tance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The
Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and
lower cost than previous generations.
Body Diode Options
As with previous generation products, Power MOS 8™ MOSFETs and FREDFETs are available in all voltage ratings. A
FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due
to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available.
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