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APT30M70BVFRG Datasheet, PDF (14/44 Pages) Microsemi Corporation – Power Semiconductors Power Modules RF Power MOSFETs
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High Voltage RF MOSFETs
The ARF family of RF Power MOSFETs are optimized for applications requiring frequencies as high as 150MHz and operating voltages as
high as 400V. Historically, RF Power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining
Microsemi's high voltage MOSFET technology with RF specific die geometries.
Why Higher Voltage? Higher VDD means higher load impedance. For 150W output from a 50V supply, the load impedance is only 8 ohms.
At 125V, the load impedance is 50 ohms. The higher impedance allows simpler transformers and combiners. Paralleled devices can still oper-
ate into reasonable and convenient impedances. The increased operating voltage also lowers the DC current required for any given power
output, increasing efficiency and reducing the size, weight and cost of other system components. High breakdown voltage is a necessity in
high efficiency switchmode amplifiers such as class C-E, which can see peak drain voltages of over 4X the applied VDD.
Part
Number
ARF449AG/BG
ARF463AG/BG
ARF463AP1G/BP1G
ARF446G/ARF447G
ARF521
ARF460AG/BG
ARF461AG/BG
ARF465AG/BG
ARF468AG/BG
ARF475FL
ARF476FL
ARF466AG/BG
ARF466FL
ARF469AG/BG
ARF477FL
ARF1500
ARF1501
ARF1510
ARF1511
ARF1519
Pout Freq.
(W) (MHz)
90 120
100 100
100 100
140 65
150 150
150 65
150 65
150 60
270 45
300 150
300 150
300 45
300 45
300 45
400 65
750 40
750 40
750 40
750 40
750 25
VDD/BVDSS
(V)
150/450
125/500
125/500
250/900
165/500
125/500
250/1000
300/1200
165/500
165/500
165/500
200/1000
200/1000
165/500
165/500
125/500
250/1000
700/1000
380/500
250/1000
Rthjc
(OC/W)
0.76
0.70
0.70
0.55
0.60
0.50
0.50
0.50
0.38
0.31
0.31
0.35
0.13
0.35
0.18
0.12
0.12
0.12
0.12
0.13
Package
Style
TO-247
TO-247
TO-247
TO-247
M174
TO-247
TO-247
TO-247
TO-264
T3A
T3
TO-264
T3A
TO-264
T3A
T1
T1
T1
T1
T2
Class of
Operation
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
D
D
A-E
M113 / M174 / M177
M208
T14
TO-247
S
D
S
TO-264
S
G
S
T1
T2
T2B
T3
T3A
T4
High Frequency RF MOSFETs
The VRF family of RF MOSFETs are improved replacements for
industry standard RF transistors. They provide improved rugged-
ness by increasing the BVDSS over 30% from the industry standard
of 125 volts to 170V minimum. Low cost flangeless packages
are another improvement that show Microsemi's dedication to
optimizing performance, reducing cost and improving reliability.
We will continue to offer a greater number of product offerings
in the new reduced-cost flangeless packages.
Part
Number
Pout Freq. Gain Eff. Typ VDD/BVDSS Rthjc Package
(W) (MHz) typ (%)
(V)
(OC/W) Style
(dB)
VRF148A
30 175 16
50
65/170
1.52 M113
VRF141
150 175 13
45
28/80
0.60 M174
VRF151
150 175 14
50
65/170
0.60 M174
VRF152
150 175 14
50
50/140
0.60 M174
VRF191
150 175 14
50
100/250
0.60 M174
VRF150
150 150 11
50
65/170
0.60 M174
VRF161
200 175 25
50
65/170
0.50 M177
VRF151G 300 175 16
55
65/170
0.30 M208
VRF2933
300 150 25
50
65/170
0.27 M177
VRF2933FL 300 150 25
50
65/170
0.27 T14
VRF3933
300 150 28
60
100/250
0.27 M177
VRF3933FL 300 150 28
60
100/250
0.27 T14
VRF2944
400 150 25
50
65/170
0.22 M177
VRF2944FL 400 150 25
50
65/170
0.22 T14
VRF154FL 600 30 17
45
65/170
0.13 T2
VRF157FL 600 30 21
45
65/170
0.13 T2
VRF164FL 600 30 21
45
65/170
0.10 T2
Datasheets available on www.microsemi.com
14
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