APT30M70BVFRG Datasheet, PDF (3/44 Pages) Microsemi Corporation – Power Semiconductors Power Modules RF Power MOSFETs

Insulated Gate Bipolar Transistors (IGBTs)
IGBTs from Microsemi
IGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching
frequency range spans from DC for minimal conduction loss to 150kHz for very high power density SMPS applications. The frequency
range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the
best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT
technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.
0
600V
IGBT Switching Frequency Ranges (kHz, hard switched)
20
40
Field Stop
60
80
100
120
140
160
Power MOS 8^TM PT
650V
900V
Power MOS 8^TM PT
Power MOS 8^TM NPT (NEW!)
1200V
Field Stop
Power MOS 7^TM PT
Power MOS 8^TM NPT
Note: Frequency ranges shown are typical for a 50A IGBT. Refer to product data sheet max frequency vs current graph for more information.
Standard
Series
MOS 7™
MOS 8™
Field Stop
Trench Gate
Voltage
Ratings (V)
1200
600, 650, 900,
1200
Technology
PT
PT, NPT
Easy to
Parallel
Short Circuit Comment
SOA
Ultra-low gate charge
Highest efficiency
600, 1200
Field Stop
X
X
Lowest conduction loss
Product Options
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series
diode. Package options include TO-220, TO-247, T-MAX^®, TO-264, and SOT-227. Customized products are available; contact
factory for details.
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