APT30M70BVFRG Datasheet, PDF (20/44 Pages) Microsemi Corporation – Power Semiconductors Power Modules RF Power MOSFETs

Rugged Custom Power Modules
Microsemi PMP has acquired a great experience and
know-how in module customization to address rugged
and wide temperature range application and offers
solution to meet with next generation integrated
power systems expectation in terms of:
• Improved Reliability
• Wider Operating Temperatures
• Higher Power
• Higher Efficiency
• Lower Weight and Size
• Lower Cost
Applications
• Avionics actuation system
• Avionics lift and pump
• Military ground vehicle
• power supply and motor control
• Navy ship auxiliary power supply
• Down hole drilling
Test Capabilities
• X-Ray inspection
• Dielectric test (up to 6KV)
• Electrical testing at specified temperature
• Burn-in
• Acoustic imaging
Reliability Testing Capabilities
• Power cycling
• Hermetic sealing
• Moisture
• Salt atmosphere
• HTGB
• Temperature shock
• HAST
• H3TRB
• Altitude
• Mechanical shock, vibration
Expertise Capabilities
• Cross-sectioning
• Structural analysis
All tests can be conducted upon demand by sampling or
at 100%. Tests performed in house or with external lab.
Our Core Competencies
• Extensive experience of rugged solutions for
harsh environments
• Wide range of Silicon technologies
• Wafer fab capabilities
• Mix of assembly technologies
• Hermetic and robust plastic packages
• Custom test & burn-in solutions
• ISO9001 certified
• End-of-life (obsolescence) management
• Thermal management
• Material expertise
• Product life management associated to risks
analysis
Various solutions are proposed offering different cost and low volume of entry:
Standard Module
Modified Standard
Custom Module
Industrial
Application
X
X
X
Extended
Temperature
Application
X
X
Harsh
Environment
Application
X
No NRE
Low Volume Entry
Low NRE
Low Volume Entry
Medium to High NRE
Low Volume Entry
DBC
Solder
Substrate Joint
Dice
Solder
Joint
Base
Plate

CTE
Thermal

(ppm/K) conductivity
(W/m.K)

Silicon Die (120 mm2) 4
136
Cu/Al₂O₃
AlSiC/Al₂O₃
Cu/AlN
17/7
390/25
7/7
170/25
17/5
390/170
AlSiC/AlN
7/5
170/170
AlSiC/Si₃N₄
7/3
170/60
Rthjc
(K/W)
0.35
0.38
0.28
0.31
0.31

Material CTE
Thermal

(ppm/K) conductivity
(W/m.K)

CuW
6.5
190
Base plate AlSiC
7
170
Cu
17
390

Subs trate
Al₂O₃
AlN
7
5
25
170
Si₃N4
3
60

Di ^e
Si
SiC
4
2.6
136
270
Density
(g/cc)
17
2.9
8.9
-
-
-
-
-
Module performance and
reliability depends on the choice
of the assembly materials
More closely matched materials TCE’s increase the
module life time because it will result in much less
stress at the interface of the materials and inside the
materials.
The higher the thermal conductivity, the lower is the
junction to case thermal resistance and the lower
will be the delta of junction temperature of the
device during operation such that the effect of power
cycling on the dice will be minimized.
Another important feature is the material density
particularly for the baseplate. Taking copper as the
reference, AlSiC has a density of 1/3 while CuW
has twice the density. Therefore AlSiC will provide
substantial weight reduction at the same time as
reliability increase.
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