APT150GT120JR Datasheet, PDF (6/6 Pages) Microsemi Corporation – Thunderbolt IGBT

APT100DQ120
V_CC
I_C
V_CE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
90%
T_J = 125°C
Gate Voltage
t_d(off)
Switching Energy
90%
t_f
10%
0
Collector Voltage
Collector Current
APT150GT120JR
10%
t_d(on)
5%
Gate Voltage _{TJ = 125°C}
t_r
10%
90%
5%
Collector Current
Collector Voltage
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Emitter/Anode
Collector/Cathode
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
* Emitter/Anode
Gate
Dimensions in Millimeters and (Inche)s
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.