APT150GT120JR Datasheet, PDF (5/6 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
100,000
C_ies
10,000
1,000
C_oes
C_res
100
0 100 200 300 400 500 600 700 800 900
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT150GT120JR
500
400
300
200
100
0
0 200 400 600 800 1000 1200 1400
V_CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.16
0.14
D = 0.9
0.12
0.7
0.1
0.08
0.5
Note:
0.06
0.3
t1
0.04
t2
0.02
0.1
0.05
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0
10^-4
10^-3
10^-2
10^-1
0.1
1
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Dissipated Power
(Watts)
T_J (°C)
T_C (°C)
.0315
.0897
.0282
.0175
.7078 12.16
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30
T_J = 125°C
T_C = 75°C
25
75°C
D = 50 %
V_CE = 800V
R_G = 4.7Ω
F
max
=
min
(f_max,
f_max2)
20
0.05
f_max1 = _{td(on) + tr + td(off) + tf}
15
100°C
10
5
f_max2 =
P_diss - P_cond
E_on2 + E_off
P_diss =
T_J - T_C
R_θJC
0 _{0 10 20 30 40 50 60 70 80 90 100}
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current