APT150GT120JR Datasheet, PDF (3/6 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
350
V_GE = 15V
300
T_J= 25°C
250
T_J= 125°C
200
150
T_J= 150°C
100
50
00 _{1 2 3 4}
567
8
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
350
250µs PULSE
300
TEST<0.5 % DUTY
CYCLE
250
200
150
100
T_J= -55°C
50
T_J= 25°C
T_J= 125°C
0
024 6
8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
I_C = 300A
4
I_C = 150A
3
I_C = 75A
2
1
08
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-.50 -.25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
350
17V 15V
300
13V
250
12V
APT150GT120JR
200
11V
150
100
10V
50
9V
8V
0
0
5 10 15 20 25 30
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
20
18
I_C = 15-0A
T_J = 25°C
16
14
V_CE = 240V
12
V_CE = 600V
10
V_CE = 960V
8
6
4
2
00
200 400 600 800 1000 1200
GATE CHARGE (nC)
FIGURE 4, Gate charge
7
V_GE = 15V.
250µs PULSE TEST
6 ^{<0.5 % DUTY CYCLE}
I_C = 300A
5
I_C = 150A
4
I_C = 75A
3
2
1
0
0 25
50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
150
125
100
75
50
25
0
25
50
75
100 125
150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature