APT150GT120JR Datasheet, PDF (4/6 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
100
80
V_GE = 15V
60
40
20 ^VCE ^{= 800V}
T_J = 25°C, or 125°C
R_G = 2.2Ω
L = 100µH
00
50 100 150 200 250 300
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
400
R_G = 2.2Ω, L = 100µH, V_CE = 800V
350
300
250
200
150
100
50
T_J = 25 or 125°C,V_GE = 15V
0
0 50 100 150 200 250 300
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
100
80
V_CE = 800V
V_GE = +15V
R_G = 2.2Ω
60
T_J = 125°C
40
T_J = 25°C
20
0
0 50 100 150 200 250 300
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
300
250
V_CE = 800V
V_GE = +15V
T_J = 125°C
200
E_on2,300A
150
100
E_off,300A
50
E_on2,150A
E_off,150A
E_on2,75A
0
E_off,75A
0
4
8
12
16
20
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT150GT120JR
750
600
450
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
300
150 _{VCE = 800V}
R_G = 2.2Ω
L = 100µH
0
0 50 100 150 200 250 300
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
R_G = 2.2Ω, L = 100µH, V_CE = 800V
200
150
T_J = 25°C, V_GE = 15V
100
50
T_J = 125°C, V_GE = 15V
0
0
50
100 150 200 250
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
30
V_CE = 800V
V_GE = +15V
25 ^{RG = 2.2Ω}
20
T_J = 125°C
15
10
T_J = 25°C
5
0
0 40 80 120 160 200 240
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
120
100
V_CE = 800V
V_GE = +15V
R_G = 2.2Ω
E_on2,300A
80
60
40
E_off,300A
20
E 150A
on2,
E_off,150A
E_on2,75A
0
E_off,75A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature