HAL805 Datasheet, PDF (18/24 Pages) Micronas – Programmable Linear Hall Effect Sensor

HAL 805
Temperature
TC
Coefficient of
Magnet (ppm/K)
−810
0
−860
−1
−910
−2
−960
−3
−1020
−4
−1070
−5
−1120
−6
−1180
−7
−1250
−8
−1320
−9
−1380
−10
−1430
−11
−1500
−12
−1570
−13
−1640
−14
−1710
−15
−1780
−16
−1870
−17
−1950
−18
−2030
−19
−2100
−20
−2180
−21
−2270
−22
−2420
−24
−2500
−25
−2600
−26
−2700
−27
−2800
−28
−2900
−29
−3000
−30
−3100
−31
TCSQ
15
16
16
16
17
17
17
18
18
19
19
20
20
20
21
21
22
22
23
23
24
24
25
26
27
27
28
28
29
30
31
18
PRELIMINARY DATA SHEET
4.4. Undervoltage Behavior
In a voltage range below 4.5 V to approximately 3.5 V,
the operation of the HAL 805 is typically given and pre-
dictable for the most sensors. Some of the parameters
may be out of the specification. Below about 3.5 V, the
digital processing is reset. If the supply voltage once
again rises above about 3.5 V, a startup time of about
20 µs elapses for the digital processing to occur. As
long as the supply voltage is still above about 2.8 V,
the analog output is kept at its last valid value ratiomet-
ric to V_DD. Below about 2.5 V, the entire sensor will
reset.
4.5. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T_J) is higher
than the temperature outside the package (ambient
temperature T_A).
T_J = T_A + ∆T
At static conditions, the following equation is valid:
∆T = I_DD * V_DD * R_thJA
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I_DD and R_th, and the max. value for V_DD from the appli-
cation.
For V_DD = 5.5 V, R_th = 200 K/W and I_DD = 10 mA the
temperature difference ∆T = 11 K.
For all sensors, the junction temperature T_J is speci-
fied. The maximum ambient temperature T_Amax can be
calculated as:
T_Amax = T_Jmax −∆T
4.6. EMC and ESD
The HAL 805 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standards DIN40839
part 1 or ISO 7637 part 1) are not relevant for these
applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4–1 is rec-
ommended. Applications with this arrangement
passed the EMC tests according to the product stan-
dards DIN 40839 part 3 (Electrical transient transmis-
sion by capacitive or inductive coupling) and part 4
(Radiated disturbances).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Micronas