HAL805 Datasheet, PDF (14/24 Pages) Micronas – Programmable Linear Hall Effect Sensor

HAL 805
PRELIMINARY DATA SHEET
3.7. Magnetic Characteristics
at T_J = −40 °C to +170 °C, V_DD = 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.
Typical Characteristics for T_J = 25 °C and V_DD = 5 V.
Symbol
B_Offset
∆B_Offset/∆T
B_Hysteresis
SR
Parameter
Magnetic Offset
Magnetic Offset Change
due to T_J
Magnetic Hysteresis
Magnetic Slew Rate
Pin No. Min.
3
−1
−15
−20
3
−
n_meff
Magnetic RMS Broadband
3
−
Noise
f_Cflicker
Corner Frequency of 1/f Noise 3
−
f_Cflicker
Corner Frequency of 1/frms
3
−
Noise
Typ.
0
0
0
2
4
12
25
50
10
20
100
Max.
1
15
Unit
mT
µT/K
Test Conditions
B = 0 mT, I_OUT = 0 mA, T_J = 25 °C
B = 0 mT, I_OUT = 0 mA
20
µT
Range = 30 mT, Filter = 500 Hz
−
mT/ms Filter frequency = 80 Hz
Filter frequency = 160 Hz
Filter frequency = 500 Hz
Filter frequency = 1 kHz
Filter frequency = 2 kHz
−
µT
BW = 10 Hz to 2 kHz
Hz
B = 0 mT
Hz
B = 65 mT, T_J = 25 °C
3.8. Open Circuit Detection
at T_J = −40 °C to +170 °C, Typical Characteristics for T_J = 25 °C
Symbol
V_OUT
V_OUT
Parameter
Output voltage
at open V_DD line
Output voltage at
open GND line
Pin No. Min.
3
0
Typ.
0
Max. Unit
0.2
V
3
4.7
4.8
5
V
Test Conditions
V_DD = 5 V
R_L = 10 kΩ to GND
V_DD = 5 V
R_L = 10 kΩ to GND
14
Micronas