N25Q512A13GSF40F Datasheet, PDF (90/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase

512Mb, Multiple I/O Serial Flash Memory
Revision History
Revision History
Rev. M – 12/2012
Rev. L – 11/2012
Rev. K – 11/2012
Rev. J – 08/2012
Rev. I – 07/2012
Rev. H – 06/2012
Rev. G – 06/2012
Rev. F – 06/2012
Rev. E – 05/2012
Rev. D – 02/2012
• Revised part numbers to selected notes in the Command Definitions table.
• Typo fix in Command Set table in Command Definitions – Dual I/O FAST READ - DTR
from DBh to BDh
• Updated part numbers
• Additional command (BULK ERASE) added to Command Set table in Command Defi-
nitions
• Corrections to Commands in Command Definitions
• Added part number N25Q512A13GSFA0X to Features
• Added I_CC1 (grade 3) to DC Characteristics and Operating Conditions
• Added part numbers N25Q512A83GSF40X and N25Q512A83G1240X and associated
QUAD commands for these part numbers.
• Typo fix in Supported Clock Frequencies - DTR table in Nonvolatile and Volatile Reg-
isters
• Updated ^tSSE specification in AC Reset Conditions table
• Added MLP8 ballout to Signal Assignments
• Updated dimensions to V-PDFN-8/8mm x 6mm package in Package Dimensions
• Typo fix in Supported Clock Frequencies - DTR table in Nonvolatile and Volatile Reg-
isters
• Added V-PDFN 8/8mm x 6mm package
• To Production status
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. M 12/12 EN
90
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.