N25Q512A13GSF40F Datasheet, PDF (42/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase

512Mb, Multiple I/O Serial Flash Memory
READ IDENTIFICATION Operations
Table 23: Serial Flash Discovery Parameter Data Structure
Compliant with JEDEC standard JC-42.4 1775.03
Description
Serial Flash discoverable parameters signature
Serial Flash discoverable parameters
Minor revision
Major revision
Number of parameter headers
Reserved
Parameter ID (0) JEDEC-defined parameter table
Parameter
Minor revision
Major revision
Parameter length (DW)
Parameter table pointer
Reserved
Address
(Byte Mode)
00h
01h
02h
03h
04h
05h
06h
07h
08h
09h
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
Address (Bit)
7:0
15:08
23:16
31:24
7:0
15:8
7:0
15:8
7:0
15:8
23:16
31:24
7:0
15:8
23:16
31:24
Data
53h
46h
44h
50h
00h
01h
00h
FFh
00h
00h
01h
09h
30h
00h
00h
FFh
Table 24: Parameter ID
Description
Byte
Address
Bits
Minimum block/sector erase sizes
30h
1:0
Write granularity
2
WRITE ENABLE command required for writing to volatile status reg-
3
isters
WRITE ENABLE command selected for writing to volatile status regis-
4
ters
Reserved
7:5
4KB ERASE command
31h
7:0
512Mb
Data
01b
1
0
0
111b
20h
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. M 12/12 EN
42
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