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N25Q512A13GSF40F Datasheet, PDF (82/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
512Mb, Multiple I/O Serial Flash Memory
DC Characteristics and Operating Conditions
DC Characteristics and Operating Conditions
Table 39: DC Current Characteristics and Operating Conditions
Parameter
Symbol
Test Conditions
Input leakage current
Output leakage current
Standby current
Standby current
Operating current
(fast-read extended I/O)
ILI
ILO
ICC1
S = VCC, VIN = VSS or VCC
ICC1 (grade 3)
S = VCC, VIN = VSS or VCC
ICC3
C = 0.1VCC/0.9VCC at 108 MHz, DQ1
= open
C = 0.1VCC/0.9VCC at 54 MHz, DQ1
= open
Operating current (fast-read dual I/O)
Operating current (fast-read quad I/O)
Operating current (program)
ICC4
Operating current (write status regis-
ICC5
ter)
C = 0.1VCC/0.9VCC at 108 MHz
C = 0.1VCC/0.9VCC at 108 MHz
S# = VCC
S# = VCC
Operating current (erase)
ICC6
S# = VCC
Min
–
–
–
–
–
–
–
–
–
–
–
Max
±2
±2
150
300
15
6
18
20
20
20
20
Unit
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
Table 40: DC Voltage Characteristics and Operating Conditions
Parameter
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Symbol
VIL
VIH
VOL
VOH
Conditions
IOL = 1.6mA
IOH = –100µA
Min
–0.5
0.7VCC
–
VCC - 0.2
Max
0.3VCC
VCC + 0.4
0.4
–
Unit
V
V
V
V
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. M 12/12 EN
82
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