MT46H16M16LFBF-6ITH Datasheet, PDF (62/79 Pages) Micron Technology – Mobile DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF/LG – 2 Meg x 32 x 4 banks

256Mb: x16, x32 Mobile DDR SDRAM
Electrical Specifications
Table 18: Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes: 1–6, 22 apply to all parameters in this table; notes appear on pages 63–65; VDD/VDDQ = 1.70–1.95V
Parameter
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
WRITE recovery time
Internal WRITE to READ command delay
Exit power-down to first valid command
Exit SELF REFRESH to first valid command
CL = 2
CL = 3
Symbol
t_RPRE(2)
t_RPRE(3)
t_RPST
t_RRD
t_WPRE
t_WPRES
t_WPST
t_WR
t_WTR
t_XP
t_XSR
-6
Min
0.5
0.9
0.4
12
0.25
0
0.4
12
1
1
120
Max
1.1
1.1
0.6
–
–
–
0.6
–
–
–
–
-75
Min
0.5
0.9
0.4
15
0.25
0
0.4
15
1
1
120
Max
1.1
1.1
0.6
–
–
–
0.6
–
–
–
–
Units
t_CK
t_CK
ns
t_CK
ns
t_CK
ns
t_CK
t_CK
ns
Notes
14, 15
13
40
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
62
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