MT46H16M16LFBF-6ITH Datasheet, PDF (60/79 Pages) Micron Technology – Mobile DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF/LG – 2 Meg x 32 x 4 banks

256Mb: x16, x32 Mobile DDR SDRAM
Electrical Specifications
Table 17:
IDD6 Specifications and Conditions (x16, x32)
Notes: 1–5, 9, 10, 36, and 39 apply to all parameters in this table; notes appear on pages 63–65;
VDD/VDDQ = 1.70–1.95V
Parameter/Condition
Self refresh current: CKE = LOW; ^tCK
= ^tCK (MIN); Address and control inputs
are stable; Data bus input are stable
Full array, 85°C
Full array, 70°C
Full array, 45°C
Full array 15°C
Half array, 85°C
Half array, 70°C
Half array, 45°C
Half array, 15°C
1/4 array, 85°C
1/4 array, 70°C
1/4 array, 45°C
1/4 array, 15°C
1/8 array, 85°C
1/8 array, 70°C
1/8 array, 45°C
1/8 array, 15°C
1/16 array, 85°C
1/16 array, 70°C
1/16 array, 45°C
1/16 array, 15°C
Symbol
IDD6a
IDD6b
IDD6c
IDD6d
IDD6a
IDD6b
IDD6c
IDD6d
IDD6a
IDD6b
IDD6c
IDD6d
IDD6a
IDD6b
IDD6c
IDD6d
IDD6a
IDD6b
IDD6c
IDD6d
Low IDD6
Option “L”
220
175
140
125
200
150
130
115
185
140
120
115
175
125
115
110
170
120
110
105
Standard IDD6
Option
300
210
190
180
275
180
160
150
265
160
140
140
255
150
130
125
250
140
120
115
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
Figure 36: Typical Self Refresh Current vs. Temperature (x16, x32)
150
125
100
Full Array
Half Array
1/4 Array
1/8 Array
1/16 Array
75
50
25
0
–40 –30 –20 –10
0
10
20
30
40
50
60
70
80
90
Temperature (°C)
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
60
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.