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MT46V16M16CV-6ITK Datasheet, PDF (28/91 Pages) Micron Technology – 256Mb: x4, x8, x16 DDR SDRAM Features | |||
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256Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications â DC and AC
Table 12:
Electrical Characteristics and Recommended AC Operating Conditions (-6T) (continued)
Notes: 1â6, 16â18, and 34 apply to the entire table; Notes appear on page 35;
0°C ï£ï TA ï£ 70°C; VDDQ = 2.5V ±0.2V, VDD = 2.5V ±0.2V
AC Characteristics
-6T (TSOP)
Parameter
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
Symbol
tWR
tWTR
tXSNR
tXSRD
n/a
Min
Max
15
â
1
â
75
â
200
â
tQH - tDQSQ
Units
ns
tCK
ns
tCK
ns
Notes
26
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. S, Core DDR: Rev. E 9/12 EN
28
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
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