MT28F322P3 Datasheet, PDF (25/36 Pages) Micron Technology – FLASH MEMORY

PRELIMINARY
2 MEG x 16
ASYNC/PAGE FLASH MEMORY
DC CHARACTERISTICS¹
PARAMETER
Input Low Voltage
Input High Voltage
Output Low Voltage
IOL = 100µA
Output High Voltage
IOH = -100µA
VPP Lockout Voltage
VPP During PROGRAM/ERASE
Operations
VCC Program/Erase Lock Voltage
Input Leakage Current
Output Leakage Current
VCC Read Current
Asynchronous Random Read, 70ns cycle
Asynchronous Random Read, 200ns cycle
VCC Page Mode Read Current at 70ns/30ns
VCC Standby Current
VCC Program Current
VCC Erase Current
VCC Erase Suspend Current
VCC Program Suspend Current
Read-While-Write Current
VPP Current
(Read, Standby, Erase Suspend,
Program Suspend)
VPP = VPP1
VPP = VPP2
SYMBOL
VIL
VIH
VOL
MIN
0
VCCQ - 0.4V
-0.10
TYP
–
–
–
VOH
VCCQ - 0.1V
–
VPPLK
VPP1
VPP2
VLKO
IL
IOZ
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
ICC8
IPP1
–
1.8
11.4
1
–
0.2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
15µA
10mA
15mA
15µA
15µA
–
–
–
–
–
MAX
0.4
VCCQ
0.10
UNITS NOTES
V
2
V
2
V
–
V
1
V
3.3
V
12.6
V
–
V
1
µA
1
µA
15
mA 3, 4
6
mA
7
mA 3, 4
50
µA
20
mA
25
mA
50
µA
5
50
µA
5
40
mA
1
µA
200
µA
NOTE:
1. All currents are in RMS unless otherwise noted.
2. VIL may decrease to -0.4V, and VIH may increase to VCCQ + 0.3V for durations not to exceed 20ns.
3. APS mode reduces ICC to approximately ICC3 levels.
4. Test conditions: Vcc = VCC (MAX), CE# = VIL, OE# = VIH. All other inputs = VIH or VIL.
5. ICC6 and ICC7 values are valid when the device is deselected. Any READ operation performed while in suspend mode will
have an additional current draw of suspend current (ICC6 or ICC7).
2 Meg x 16 Async/Page Flash Memory
MT28F322P3FJ_3.p65 – Rev. 3, Pub. 7/02
25
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.