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MT28F322P3 Datasheet, PDF (1/36 Pages) Micron Technology – FLASH MEMORY
FLASH MEMORY
PRELIMINARY‡
2 MEG x 16
ASYNC/PAGE FLASH MEMORY
MT28F322P3
Low Voltage, Extended Temperature
FEATURES
• Flexible dual-bank architecture
Support for true concurrent operation with zero
latency
Read bank a during program bank b and vice
versa
Read bank a during erase bank b and vice versa
• Basic configuration:
Seventy-one erasable blocks
Bank a (8Mb for data storage)
Bank b (24Mb for program storage)
• VCC, VCCQ, VPP voltages
2.7V (MIN), 3.3V (MAX) VCC
2.2V (MIN), 3.3V (MAX) VCCQ
3.0V (TYP) VPP (in-system PROGRAM/ERASE)
12V ±5% (HV) VPP tolerant (factory programming
compatibility)
• Random access time: 70ns @ 2.7V VCC
• Page Mode read access
Eight-word page
Interpage read access: 70ns @ 2.7V
Intrapage read access: 30ns @ 2.7V
• Low power consumption (VCC = 3.3V)
Asynchronous/interpage READ < 15mA
Intrapage READ < 7mA
WRITE < 20mA (MAX)
ERASE < 25mA (MAX)
Standby < 15µA (TYP), 50µA (MAX) @ 3.3V
Automatic power save (APS) feature
• Enhanced write and erase suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
• Dual 64-bit chip protection registers for security
purposes
• Cross-compatible command support
Extended command set
Common flash interface
• PROGRAM/ERASE cycle
100,000 WRITE/ERASE cycles per block
• Fast programming algorithm
VPP = 12V ±5%
BALL ASSIGNMENT
48-Ball FBGA
1
2
3
4
5
6
7
8
A A13 A11
A8
VPP
WP# A19
A7
A4
B A14 A10 WE# RST# A18 A17
A5
A2
C A15 A12
A9
NC
A20
A6
A3
A1
D A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE#
A0
E VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0
VSS
F VSS
DQ7 DQ13 DQ4
VCC DQ10 DQ1 OE#
Top View
(Ball Down)
NOTE: See page 7 for Ball Description Table.
See page 35 for mechanical drawing.
OPTIONS
MARKING
• Timing
70ns access
80ns access
• Boot Block Configuration
Top
Bottom
• Package
48-ball FBGA (6 x 8 ball grid)
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
-70
-80
T
B
FJ
None
ET
Part Number Example:
MT28F322P3FJ-70 BET
2 Meg x 16 Async/Page Flash Memory
MT28F322P3FJ_3.p65 – Rev. 3, Pub. 7/02
1
©2002, Micron Technology, Inc.
‡PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE
SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S
PRODUCTION DATA SHEET SPECIFICATIONS.