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MT48LC16M4A2_99 Datasheet, PDF (23/55 Pages) Micron Technology – SYNCHRONOUS DRAM
Fixed-length or full-page WRITE bursts can be trun-
cated with the BURST TERMINATE command. When
truncating a WRITE burst, the input data applied coin-
cident with the BURST TERMINATE command will be
ignored. The last data written (provided that DQM is
LOW at that time) will be the input data applied one
clock previous to the BURST TERMINATE command.
This is shown in Figure 19, where data n is the last
desired data element of a longer burst.
T0
T1
T2
CLK
COMMAND
WRITE
BURST
NEXT
TERMINATE COMMAND
ADDRESS
BANK,
COL n
(ADDRESS)
DQ
DIN
n
(DATA)
NOTE: DQMs are LOW.
Figure 19
Terminating a WRITE Burst
CLK
CKE HIGH
CS#
RAS#
CAS#
WE#
A0-A9, A11
A10
All Banks
Bank Selected
BA0,1
BANK
ADDRESS
Figure 20
PRECHARGE Command
64Mb: x4, x8, x16
SDRAM
PRECHARGE
The PRECHARGE command (Figure 20) is used to
deactivate the open row in a particular bank or the open
row in all banks. The bank(s) will be available for a
subsequent row access some specified time (tRP) after
the PRECHARGE command is issued. Input A10 deter-
mines whether one or all banks are to be precharged,
and in the case where only one bank is to be precharged,
inputs BA0, BA1 select the bank. When all banks are to
be precharged, inputs BA0, BA1 are treated as “Don’t
Care.” Once a bank has been precharged, it is in the idle
state and must be activated prior to any READ or WRITE
commands being issued to that bank.
POWER-DOWN
Power-down occurs if CKE is registered LOW coinci-
dent with a NOP or COMMAND INHIBIT when no
accesses are in progress. If power-down occurs when all
banks are idle, this mode is referred to as precharge
power-down; if power-down occurs when there is a row
active in either bank, this mode is referred to as active
power-down. Entering power-down deactivates the in-
put and output buffers, excluding CKE, for maximum
power savings while in standby. The device may not
remain in the power-down state longer than the refresh
period (64ms) since no refresh operations are per-
formed in this mode.
The power-down state is exited by registering a NOP
or COMMAND INHIBIT and CKE HIGH at the desired
clock edge (meeting tCKS). See Figure 21.
CLK
tCKS
((
))
((
))
> tCKS
CKE
((
))
((
COMMAND
NOP
))
((
NOP
))
All banks idle
Input buffers gated off
Enter power-down mode.
Exit power-down mode.
ACTIVE
tRCD
tRAS
tRC
DON’T CARE
Figure 21
Power-Down
64Mb: x4, x8, x16 SDRAM
64MSDRAM.p65 – Rev. 11/99
23
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999, Micron Technology, Inc.